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TK16H60C

ApplicationLow drain−source ON resistance : RDS (ON) = 0. 32 (typ.)High forward transfer admittance : |Yfs| = 11S (typ.)Low leakage current : IDSS = 100 A (max) (VDS = 600 V)Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)Specifications Characteristics Symbol Ratings ...

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TK16H60C: ApplicationLow drain−source ON resistance : RDS (ON) = 0. 32 (typ.)High forward transfer admittance : |Yfs| = 11S (typ.)Low leakage current : IDSS = 100 A (max) (VDS = 600 V)Enhancement mode :...

TK16H60C Data Sheet

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Part Number:
TK16H60C
Supply Ability:
5000

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Product Details

Description



Application

Low drain−source ON resistance         : RDS (ON) = 0. 32 (typ.)
High forward transfer admittance        : |Yfs| = 11S (typ.)
Low leakage current              : IDSS = 100 A (max) (VDS = 600 V)
Enhancement mode               : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)


Specifications

Characteristics
Symbol
Ratings
Unit
Drain-source voltage
VDSS
600
V
Drain-gate voltage (RGS=20 k)
VDGR
600
V
Gate−source voltage
VGSS
±30
V
Drain current DC(Note 1)
ID
16
A
Pulse(Note 1)
IDP
64
A
Drain power dissipation (Tc=25)
PD
150
W
Single pulse avalanche energy (Note 2)
EAS
979
mJ
Avalanche current
IAR
16
A
Repetitive avalanche energy (Note 3)
EAR
15
mJ
Channel temperature
Tch
150
Storage temperature range
Tstg
−55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling  recautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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