TK15H50C

Features:

• Low drain−source ON resistance : R_{DS (ON)} = 0. 33 Ω (typ.)
• High forward transfer admittance : |Yfs| = 8.5 S (typ.)
• Low leakage current : I_DSS = 100 µA (max) (V_DS = 500 V)
• Enhancement mode : V_th = 2.0~4.0 V (V_DS = 10 V, I45_D = 1 mA)



Specifications

Characteristic		Symbol	Rating	Unit
Drain-Source Voltage		VDSS	500	V
Drain−gate voltage (RGS = 20 kΩ)		VDGR	500	V
Gate-Source Voltage		VGSS	±30	V
Drain Current	DC (Note 1)	ID	15	A
	Pulse (Note 1)	IDP	60
Drain power dissipation (Tc = 25)		PD	150	W
Single pulse Avalanche Energy (Note 2)		EAS	765	mJ
Avalanche current		IAR	15	A
Repetitive Avalanche Energy (Note 3)		EAR	15	mJ
Channel temperature		Tch	150
Storage temperature range		TSTG	−55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and
          the significant change in temperature, etc.) may cause this product to decrease in the reliability
          significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within
          the absolute maximum ratings. Please design the appropriate reliability upon reviewing the 
          Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods)
          and individual reliability data (i.e. reliability test report and estimated failure rate, etc).