MOSFET MOSFET N-Ch 600V 15
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 600 V | ||
| Continuous Drain Current : | 15 A | Resistance Drain-Source RDS (on) : | 0.3 Ohms | ||
| Configuration : | Single | Mounting Style : | Through Hole | ||
| Package / Case : | TO-220 SIS | Packaging : | Tube |
| Technical/Catalog Information | TK15A60U(Q) |
| Vendor | Toshiba |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 15A |
| Rds On (Max) @ Id, Vgs | 300 mOhm @ 7.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 950pF @ 10V |
| Power - Max | 40W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 17nC @ 10V |
| Package / Case | TO-220 (SIS) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | TK15A60U Q TK15A60UQ TK15A60UQ ND TK15A60UQND TK15A60UQ |