MOSFET MOSFET N-Ch 600V 15
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 600 V | ||
Continuous Drain Current : | 15 A | Resistance Drain-Source RDS (on) : | 0.3 Ohms | ||
Configuration : | Single | Mounting Style : | Through Hole | ||
Package / Case : | TO-220 SIS | Packaging : | Tube |
Technical/Catalog Information | TK15A60U(Q) |
Vendor | Toshiba |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25° C | 15A |
Rds On (Max) @ Id, Vgs | 300 mOhm @ 7.5A, 10V |
Input Capacitance (Ciss) @ Vds | 950pF @ 10V |
Power - Max | 40W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 17nC @ 10V |
Package / Case | TO-220 (SIS) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | TK15A60U Q TK15A60UQ TK15A60UQ ND TK15A60UQND TK15A60UQ |