Application` Low drain−source ON resistance : RDS (ON) = 0.78 (typ.)` High forward transfer admittance : |Yfs| = 11S (typ.)` Low leakage current : IDSS = 100 A (max) (VDS = 720V)` Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)Specifications...
TK13H90A1: Application` Low drain−source ON resistance : RDS (ON) = 0.78 (typ.)` High forward transfer admittance : |Yfs| = 11S (typ.)` Low leakage current : IDSS = 100 A (m...
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Symbol | Characteristic | Rating | Unit | |
VDSS | Drain-Source Voltage | 900 | V | |
VDGR | Drain?gate voltage (RGS = 20 k) | 900 | V | |
VGSS | Gate?source voltage | ±30 |
V | |
ID IDP |
Drain current | DC (Note 1) | 13 | A |
Pulse (Note 1) | 39 | |||
PD | Drain power dissipation (Tc=25) | 150 | W | |
EAS | Single-pulse avalanche energy (Note 2) |
491 | mJ | |
IAR | Avalanche current | 13 | A | |
EAR | Repetitive avalanche energy (Note 3) | 15 | mJ | |
Tch | Channel temperature | 150 | ||
Tstg | Storage temperature range | -55~150 |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating onditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriatereliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).