TK100E06N1,S1X

MOSFET N CH 60V 100A TO-220

product image

TK100E06N1,S1X Picture
SeekIC No. : 003431231 Detail

TK100E06N1,S1X: MOSFET N CH 60V 100A TO-220

floor Price/Ceiling Price

US $ 1.16~2.56 / Piece | Get Latest Price
Part Number:
TK100E06N1,S1X
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~25
  • 25~100
  • 100~250
  • 250~500
  • 500~1000
  • 1000~2500
  • 2500~5000
  • Unit Price
  • $2.56
  • $2.28
  • $2.05
  • $1.87
  • $1.69
  • $1.51
  • $1.28
  • $1.21
  • $1.16
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/24

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Series: - Manufacturer: Toshiba
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - Output Power : 13.5 W
FET Feature: Standard Drain to Source Voltage (Vdss): 60V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 100A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 50A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) @ Vgs: 140nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 10500pF @ 30V
Power - Max: 255W Mounting Type: *
Package / Case: * Supplier Device Package: *    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25° C: 100A
Mounting Type: *
Gate Charge (Qg) @ Vgs: 140nC @ 10V
Supplier Device Package: *
Package / Case: *
Packaging: *
Vgs(th) (Max) @ Id: 4V @ 1mA
Manufacturer: Toshiba
Power - Max: 255W
Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds: 10500pF @ 30V


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Integrated Circuits (ICs)
Resistors
Computers, Office - Components, Accessories
Potentiometers, Variable Resistors
View more