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TISP61089BDR

SCRs Dual P Gate Forward Conducting

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SeekIC No. : 00199024 Detail

TISP61089BDR: SCRs Dual P Gate Forward Conducting

TISP61089BDR Data Sheet

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Part Number:
TISP61089BDR
Mfg:
Bourns
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/3

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Product Details

Quick Details

Breakover Current IBO Max : 6.5 A Rated Repetitive Off-State Voltage VDRM : 170 V
Off-State Leakage Current @ VDRM IDRM : 0.005 mA Gate Trigger Voltage (Vgt) : 2.5 V
Gate Trigger Current (Igt) : 5 mA Holding Current (Ih Max) : 150 mA
Mounting Style : SMD/SMT Package / Case : SOIC-8
Packaging : Reel    

Description

On-State RMS Current (It RMS) :
Forward Voltage Drop :
Maximum Gate Peak Inverse Voltage :
Packaging : Reel
Mounting Style : SMD/SMT
Gate Trigger Voltage (Vgt) : 2.5 V
Off-State Leakage Current @ VDRM IDRM : 0.005 mA
Holding Current (Ih Max) : 150 mA
Gate Trigger Current (Igt) : 5 mA
Package / Case : SOIC-8
Rated Repetitive Off-State Voltage VDRM : 170 V
Breakover Current IBO Max : 6.5 A


Parameters:

Technical/Catalog InformationTISP61089BDR
VendorBourns Inc.
CategoryCircuit Protection
Package / Case8-SOIC (3.9mm Width)
PackagingTape & Reel (TR)
TechnologyMixed Technology
ApplicationsSLIC
Number of Circuits2 - Dual
Voltage - Working-100V
Voltage - Clamping-112V
Power (Watts)-
Other Names TISP61089BDR
TISP61089BDR



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