PinoutSpecifications Rating Symbol Value Unit Repetitive peak off-state voltage (see Note 1)'5070H3BJ'5080H3BJ'5095H3BJ'5110H3BJ'5115H3BJ'5150H3BJ'5190H3BJ VDRM -58-65-75-80-90-120-160 V Non-repetitive peak impulse current (see Notes 2, 3 and 4) 2/10 s (GR-1089-CORE,...
TISP5095H3BJ: PinoutSpecifications Rating Symbol Value Unit Repetitive peak off-state voltage (see Note 1)'5070H3BJ'5080H3BJ'5095H3BJ'5110H3BJ'5115H3BJ'5150H3BJ'5190H3BJ VDRM -58-65-75-80...
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PinoutSpecifications Rating Symbol Value Unit Repetitive peak off-state voltage...
PinoutSpecifications RATING SYMBOL VALUE UNIT Repetitive peak off-state voltage ( 0°C &...
Rating |
Symbol |
Value |
Unit |
Repetitive peak off-state voltage (see Note 1) '5070H3BJ '5080H3BJ '5095H3BJ '5110H3BJ '5115H3BJ '5150H3BJ '5190H3BJ |
VDRM |
|
V |
Non-repetitive peak impulse current (see Notes 2, 3 and 4) 2/10 s (GR-1089-CORE, 2/10 s voltage wave shape) 8/20 s (IEC 61000-4-5, 1.2/50 s voltage, 8/20 s current combination wave generator) 10/160 s (TIA-968-A, 10/160 s voltage wave shape) 5/200 s (VDE 0433, 10/700 s voltage waveshape) 0.2/310 s (I3124, 0.5/700 s waveshape) 5/310 s (ITU-T K.44, 10/700 s voltage waveshape used in K.20/21/45) 5/310 s (FTZ R12, 10/700 s voltage waveshape) 10/560 s (TIA-968-A, 10/560 s voltage wave shape) 10/1000 s (GR-1089-CORE, 10/1000 s voltage wave shape) |
IPPSM |
±500 ±300 ±250 ±220 ±200 ±200 ±200 ±160 ±100 |
A |
Non-repetitive peak on-state current (see Notes 2, 3 and 5) 20 ms, 50 Hz (full sine wave) 16.7 ms, 60 Hz (full sine wave) 1000 s 50 Hz/60 Hz a.c. |
ITSM |
55 60 2.1 |
A |
Initial rate of rise of on-state current, GR-1089-CORE 2/10 s wave shape |
diT/dt |
±400 |
A/s |
Junction temperature |
TJ |
-40 to +150 |
°C |
Storage temperature range |
Tstg |
-65 to +150 |
°C |
NOTES: 1. See Figure 9 for voltage values at lower temperatures.
2. Initially the device must be in thermal equilibrium with TJ = 25 °C.
3. The surge may be repeated after the device returns to its initial conditions.
4. See Figure 10 for current ratings at other temperatures.
5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring track widths. Derate current values at -0.61%/°C for ambient temperatures above 25 °C. See Figure 8 for current ratings at other durations.
These devices TISP5095H3BJ are designed to limit overvoltages on the telephone and data lines. Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used for the protection of ISDN power supply feeds. Two devices, one for the Ring output and the other for the Tip output, will provide protection for single supply analogue SLICs. A combination of three devices will give a low capacitance protector network for the 3-point protection of ISDN lines.
The protector TISP5095H3BJ consists of a voltage-triggered unidirectional thyristor with an anti-parallel diode. Negative overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This lowvoltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the diverted current subsides. Positive overvoltages are limited by the conduction of the anti-parallel diode.