TISP4240F3LM

Rated Repetitive Off-State Voltage VDRM : +/- 180 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Breakover Current IBO Max : +/- 600 mA
On-State Voltage : +/- 3 V
Non Repetitive On-State Current : 4 A
Package / Case : DO-92
Holding Current (Ih Max) : +/- 150 mA
Off-State Leakage Current @ VDRM IDRM : +/- 10 uA
Breakover Voltage VBO : +/- 240 V
Off-State Capacitance CO : 11 pF to 44 pF


Pinout




Specifications

Rating	Symbol	Value	Unit
Repetitive peak off-state voltage (0 < TJ < 70 )                                                                                                                                            '4072                                                                                                                                            '4082                                                                                                                                            '4125                                                                                                                                            '4150                                                                                                                                            '4180                                                                                                                                            '4240                                                                                                                                            '4260                                                                                                                                            '4290                                                                                                                                            '4320                                                                                                                                            '4380	VDRM	± 58 ± 66 ± 100 ± 120 ± 145 ± 180 ± 200 ± 220 ± 240 ± 270	V
Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3) 2/10 s (FCC Part 68, 2/10 s voltage wave shape) excluding '4072 - '4082 8/20 s (ANSI C62.41, 1.2/50 s voltage wave shape) excluding '4072 - '4082 10/160 s (FCC Part 68, 10/160 s voltage wave shape) 5/200 s (VDE 0433, 2 kV, 10/700 s voltage wave shape) 0.2/310 s (I3124, 1.5 kV, 0.5/700 s voltage wave shape) 5/310 s (ITU-T K.20/21, 1.5 kV, 10/700 s voltage wave shape) 5/310 s (FTZ R12, 2 kV, 10/700 s voltage wave shape) 10/560 s (FCC Part 68, 10/560 s voltage wave shape) 10/1000 s (REA PE-60, 10/1000 s voltage wave shape) 2/10 s (FCC Part 68, 2/10 s voltage wave shape) '4072 - '4082 only 8/20 s (ANSI C62.41, 1.2/50 s voltage wave shape) '4072 - '4082 only	ITSP	175 120 60 50 38 38 50 45 35 80 70	A
Non-repetitive peak on-state current (see Notes 2 and 3) 50/60 Hz, 1 s	ITSM	4	A
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A	diT/dt	250	A/s
Junction temperature	TJ	-40 to +150
Storage temperature range	Tstg	-55 to +150

NOTES: 1. Initially the TISP must be in thermal equilibrium with 0 < TJ < 70 .
2. The surge may be repeated after the TISP returns to its initial conditions.
3. Above 70 , derate linearly to zero at 150 lead temperature.

Description

These devices TISP4240F3LM are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A single device provides 2- oint protection and is typically used for the protection of 2-wire telecommunication equipment (e.g. between the Ring to Tip wires for  elephones and modems). Combinations of devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).

The protector TISP4240F3LM consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially  lipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the diverted current subsides.