TISP4180LP

Mounting Style : Through Hole
Breakover Current IBO Max : +/- 600 mA
On-State Voltage : +/- 3 V
Off-State Capacitance CO : 70 pF
Holding Current (Ih Max) : +/- 150 mA
Off-State Leakage Current @ VDRM IDRM : +/- 10 uA
Breakover Voltage VBO : +/- 180 V
Maximum Operating Temperature : + 70 C
Rated Repetitive Off-State Voltage VDRM : +/- 120 V
Non Repetitive On-State Current : 2.5 A
Package / Case : TO-92


Specifications

RATING	SYMBOL	VALUE	UNIT
Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3)             8/20 µs (ANSI C62.41, open-circuit voltage wave shape 1.2/50 µs)            5/200 µs (VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 µs)            0.2/310 µs (RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 µs)            5/310 µs (CCITT IX K17, open-circuit voltage wave shape 1.5 kV, 10/700 µs)	ITSP	100 50 38 38	A
Non-repetitive peak on-state current, 50 Hz, 1 s (see Notes 1 and 2)	ITSM	2.5	A rms
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A	diT/dt	250	A/µs
Junction temperature	TJ	150	°C
Operating free - air temperature range		0 to 70	°C
Storage temperature range	Tstg	-40 to +150	°C
Lead temperature 1.5 mm from case for 10 s	Tlead	260	°C

Description

The TISP4xxxLP series is designed specifically for telephone equipment protection against lightning and transients induced by a.c. power lines. These devices consist of a bidirectional suppressor element connecting the A and B terminals. They will suppress inter-wire voltage transients.

Transients TISP4xxxLP are initially clipped by zener action until the voltage rises to the breakover level, which causes the device to crowbar. The high crowbar holding current prevents d.c. latchup as the transient subsides.

These monolithic protection devices TISP4xxxLP are fabricated in ion-implanted planar structures to ensure precise and matched breakover control and are virtually transparent to the system in normal operation.