TISP4180F3LM

Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Breakover Current IBO Max : +/- 600 mA
On-State Voltage : +/- 3 V
Non Repetitive On-State Current : 4 A
Package / Case : DO-92
Holding Current (Ih Max) : +/- 150 mA
Off-State Leakage Current @ VDRM IDRM : +/- 10 uA
Breakover Voltage VBO : +/- 180 V
Rated Repetitive Off-State Voltage VDRM : +/- 145 V
Off-State Capacitance CO : 15 pF to 43 pF


Specifications

RATING	SYMBOL	VALUE	UNIT
'4070 '4080 '4095 '4125 '4145 '4165 Repetitive peak off-state voltage (0 °C < TJ< 70 °C)                                                         '4180 '4200 '4240 '4265 '4300 '4350 '4400	VDRM	± 58 ± 66 ±100 ±120 ±145 ±155 ±180 ±200 ±220 ±240 ±270	V
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)            2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape)            8/20 µs (IEC 61000-4-5, 1.2/50 µs voltage, 8/20 current combination wave generator)           10/160 µs (FCC Part 68, 10/160 µs voltage wave shape)            5/200 µs (VDE 0433, 10/700 µs voltage wave shape)           0.2/310 µs (I3124, 0.5/700 µs voltage wave shape)            5/310 µs (ITU-T K20/21, 10/700 µs volt wave shape)           5/310 µs (FTZ R12, 10/700 µs voltage wave shape)            5/320 µs (FCC Part 68, 9/720 µs voltage wave shape)          10/560 µs (FCC Part 68, 10/560 µs voltage wave shape)          10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape)          2/10 µs (FCC Part 68, 2/10 µs voltage wave shape) '4072 - '4082 only         8/20 µs (ANSI C62.41, 1.2/50 µs voltage wave shape) '4072 - '4082 only	ITSP	170 120 60 50 38 38 50 45 30 80 70	A
Non-repetitive peak on-state current (see Notes 2, 3 and 5)              50/60 Hz, 1 s	ITSM	4	A
Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 38 A	diT/dt	250	A/µs
Junction temperature	TJ	-40 to +150	°C
Storage temperature range	Tstg	-65 to +150	°C

Description

These devices TISP4xxxF3LM are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used for the protection of 2-wire telecommunication equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).

The protector TISP4xxxF3LM consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the diverted current subsides.

This TISP4xxxF3LM range consists of ten voltage variants to meet various maximum system voltage levels (58 V to 270 V). They are guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These protection devices are supplied in a DO-92 (LM) cylindrical plastic package. TheTISP4xxxF3LM is a straight lead DO-92 supplied in bulk pack and on tape and reeled. The TISP4xxxF3LMFis a formed lead DO-92 supplied only on tape and reeled.