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TISP4160LP

Specifications RATING SYMBOL VALUE UNIT Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3) 8/20 µs (ANSI C62.41, open-circuit voltage wave shape 1.2/50 µs) 5/200 µs (VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 µs) 0.2/310 &micr...

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TISP4160LP: Specifications RATING SYMBOL VALUE UNIT Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3) 8/20 µs (ANSI C62.41, open-circuit voltage wave shape 1.2/50 µ...

TISP4160LP Data Sheet

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Part Number:
TISP4160LP
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

RATING
SYMBOL
VALUE
UNIT
Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3)
            8/20 µs (ANSI C62.41, open-circuit voltage wave shape 1.2/50 µs)
           5/200 µs (VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 µs)
           0.2/310 µs (RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 µs)
           5/310 µs (CCITT IX K17, open-circuit voltage wave shape 1.5 kV, 10/700 µs)
ITSP
100
50
38
38
A
Non-repetitive peak on-state current, 50 Hz, 1 s (see Notes 1 and 2)
ITSM
2.5
A rms
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A
diT/dt
250
A/µs
Junction temperature
TJ
150
°C
Operating free - air temperature range
0 to 70
°C
Storage temperature range
Tstg
-40 to +150
°C
Lead temperature 1.5 mm from case for 10 s
Tlead
260
°C



Description

The TISP4xxxLP series is designed specifically for telephone equipment protection against lightning and transients induced by a.c. power lines. These devices consist of a bidirectional suppressor element connecting the A and B terminals. They will suppress inter-wire voltage transients.

Transients TISP4xxxLP are initially clipped by zener action until the voltage rises to the breakover level, which causes the device to crowbar. The high crowbar holding current prevents d.c. latchup as the transient subsides.

These monolithic protection devices TISP4xxxLP are fabricated in ion-implanted planar structures to ensure precise and matched breakover control and are virtually transparent to the system in normal operation.




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