TISP4082LP

Mounting Style : Through Hole
Breakover Current IBO Max : +/- 600 mA
On-State Voltage : +/- 3 V
Off-State Capacitance CO : 110 pF
Holding Current (Ih Max) : +/- 150 mA
Rated Repetitive Off-State Voltage VDRM : +/- 58 V
Off-State Leakage Current @ VDRM IDRM : +/- 10 uA
Maximum Operating Temperature : + 70 C
Breakover Voltage VBO : +/- 82 V
Non Repetitive On-State Current : 2.5 A
Package / Case : TO-92


Specifications

RATING	SYMBOL	VALUE	UNIT
Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3)             5/310 µs (CCITT IX K17 open-circuit voltage wave shape 1.5 kV, 10/700 µs)	ITSP	25	A
Non-repetitive peak on-state current, 50 Hz,1 s (see Notes 1 and 2)	ITSM	2.5	A rms
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A	diT/dt	250	A/µs
Junction temperature	TJ	150	°C
Operating free - air temperature range		0 to 70	°C
Storage temperature range	Tstg	-40 to +150	°C
Lead temperature 1.5 mm from case for 10 s	Tlead	260	°C

Description

The TISP4082LP is designed specifically for telephone equipment protection against lightning and transients induced by a.c. power lines. These devices consist of a bidirectional suppressor element connecting the A and B terminals. They will suppress inter-wire voltage transients.

Transients TISP4082LP are initially clipped by zener action until the voltage rises to the breakover level, which causes the device to crowbar. The high crowbar holding current prevents d.c. latchup as the transient subsides.

These monolithic protection devices TISP4082LP are fabricated in ion-implanted planar structures to ensure precise and matched breakover control and are virtually transparent to the system in normal operation.