TISP4070M3BJ

Rated Repetitive Off-State Voltage VDRM :
Maximum Operating Temperature : + 85 C
Mounting Style : SMD/SMT
Package / Case : DO-214AA-2
Breakover Current IBO Max : +/- 600 mA
Off-State Leakage Current @ VDRM IDRM : +/- 5 uA
On-State Voltage : +/- 3 V
Breakover Voltage VBO : +/- 70 V
Off-State Capacitance CO : 36 pF to 83 pF
Non Repetitive On-State Current : 30 A, 32 A
Holding Current (Ih Max) : +/- 350 mA


Pinout




Specifications

RATING	SYMBOL	VALUE	UNIT
'4070 '4080 '4095 '4125 '4145 '4165 Repetitive peak off-state voltage, (see Note 1)                                                                    '4180 '4200 '4240 '4265 '4300 '4350 '4400	VDRM	± 58 ± 65 ± 75 ±100 ±120 ±135 ±145 ±155 ±180 ±200 ±230 ±275 ±300	V
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)             2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape)             8/20 µs (IEC 61000-4-5, 1.2/50 µs voltage, 8/20 current combination wave generator)            10/160 µs (FCC Part 68, 10/160 µs voltage wave shape)            5/200 µs (VDE 0433, 10/700 µs voltage wave shape)            0.2/310 µs (I3124, 0.5/700 µs voltage wave shape)            5/310 µs (ITU-T K20/21, 10/700 µs voltage wave shape)            5/310 µs (FTZ R12, 10/700 µs voltage wave shape)             5/320 µs (FCC Part 68, 9/720 µs voltage wave shape)           10/560 µs (FCC Part 68, 10/560 µs voltage wave shape)           10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape)	ITSP	500 300 250 220 200 200 200 200 200 160 100	A
Non-repetitive peak on-state current (see Notes 2, 3 and 5)         20 ms (50 Hz) full sine wave         16.7 ms (60 Hz) full sine wave         1000 s 50 Hz/60 Hz a.c.	ITSM	55 60 2.3	A
Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 200 A	diT/dt	400	A/µs
Junction temperature	TJ	-40 to +150	°C
Storage temperature range	Tstg	-65 to +150	°C

Description

These devices TISP4xxxM3BJ are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used for the protection of 2-wire telecommunication equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).

The protector TISP4xxxM3BJ consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the diverted current subsides.

This TISP4xxxM3BJ range consists of thirteen voltage variants to meet various maximum system voltage levels (58 V to 275 V). They are guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These medium (M) current protection devices are in a plastic package SMBJ (JEDEC DO-214AA with J-bend leads) and supplied in embossed tape reel pack. For alternative voltage and holding current values, consult the factory. For higher rated impulse currents in the SMB package, the 100 A 10/1000 TISP4xxxH3BJ series is available.