TISP4070J1BJ

Features: · Ground Return Element of Y Configuration-2x Current Capability of Y Upper Elements-Available in a Wide Range of Voltages-Enables Symmetrical and Asymmetrical Y Designs-SMB (DO-214AA) Package· Ion-Implanted Breakdown Region-Precise and Stable Voltage-Low Voltage Overshoot Under SurgeSpe...

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SeekIC No. : 004519495 Detail

TISP4070J1BJ: Features: · Ground Return Element of Y Configuration-2x Current Capability of Y Upper Elements-Available in a Wide Range of Voltages-Enables Symmetrical and Asymmetrical Y Designs-SMB (DO-214AA) Pac...

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Part Number:
TISP4070J1BJ
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/11

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Product Details

Description



Features:

· Ground Return Element of Y Configuration
-2x Current Capability of Y Upper Elements
-Available in a Wide Range of Voltages
-Enables Symmetrical and Asymmetrical Y Designs
-SMB (DO-214AA) Package
· Ion-Implanted Breakdown Region
-Precise and Stable Voltage
-Low Voltage Overshoot Under Surge



Specifications

Rating Symbol Value Unit
Repetitive peak off-state voltage
'4070
'4080
'4095
'4115
'4125
'4145
'4165
'4180
'4200
'4219
'4250
'4290
'4350
'4395
VDRM ±58
±65
±75
±90
±100
±120
±135
±145
±155
±180
±190
±220
±275
±320
V
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape)
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 volt age wave shape)
10/160 (TIA/EIA-IS-968 (Replaces FCC Part 68), 10/160 voltage wave shape)
4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous)
5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single)
5/320 (TIA/EIA-IS-968 (Replaces FCC Part 68), 9/720 voltage wave shape, single)
10/560 (TIA/EIA-IS-968 (Replaces FCC Part 68), 10/560 voltage wave shape)
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape)
IPPSM 1000
800
400
370
350
350
250
200
A
Non-repetitive peak on-state current (see Notes 1 and 2)
50 Hz, 1 cycle
60 Hz, 1 cycle
ITSM 80
100
A
Initial rate of rise of on-s tate current, Linear current ramp, Maximum ramp value < 50 A diT/dt 800 A/s
Junction temperature TJ -40 to +150 °C
Storage temperature range Tstg -65 to +150 °C
NOTES: 1. Initially, the device must be in thermal equilibrium with TJ = 25 °C.
2. These non-repetitive rated currents are peak values of either polarity. The surge may be repeated after the device returns to its
initial conditions.



Description

The TISP4xxxJ1BJ is a symmetrical voltage-triggered bidirectional thyristor device which has been designed as the tail (ground return) element of a Y circuit configured protector. As such, the TISP4xxxJ1BJ must be rated to conduct the sum of the TIP and RING currents. For example, the normal GR-1089-CORE testing can impose 200 A, 10/1000 and 1000 A, 2/10 on the ground return element of the Y configuration. Using the TISP4xxxJ1BJ together with two TISP4xxxH3BJ parts gives a 2x 100 A, 10/1000 Y protector circuit. For ITU-T applications, using the TISP4xxxJ1BJ with a TISP3xxxT3BJ gives a coordinated Y protector with a 2x 120 A, 5/310 capability. Design tables are given in the Applications Information section. These SMB package combinations are often more space efficient than single package Y protection multi-chip integrations.

These devices TISP4xxxJ1BJ allow signal voltages, without clipping, up to the maximum off-state voltage value, VDRM, see Figure 1. Voltages above VDRM are limited and will not exceed the breakover voltage, V(BO), level. If sufficient current flows due to the overvoltage, the device switches into a lowvoltage on-state condition, which diverts the current from the overvoltage through the device. When the diverted current falls below the holding current, IH, level the devices switches off and restores normal system operation.




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