TISP3115H3SL

Mounting Style : Through Hole
Rated Repetitive Off-State Voltage VDRM : +/- 90 V
Maximum Operating Temperature : + 150 C
Breakover Current IBO Max : +/- 600 mA
Non Repetitive On-State Current : 60 A
Breakover Voltage VBO : +/- 115 V
Off-State Leakage Current @ VDRM IDRM : +/- 5 uA
On-State Voltage : +/- 3 V
Holding Current (Ih Max) : +/- 150 mA
Off-State Capacitance CO : 73 pF to 170 pF
Package / Case : SIP-3


Specifications

Rating	Symbol	Value	Unit
Repetitive peak off-state voltage, (see Note 1)'3070                                                                          '3080                                                                          '3095                                                                          '3115                                                                          '3125                                                                          '3135                                                                          '3145                                                                          '3180                                                                          '3210                                                                          '3250                                                                          '3290                                                                          '3350	VDRM	± 58 ± 65 ± 75 ± 90 ±100 ±110 ±120 ±145 ±160 ±190 ±220 ±275	V
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)      2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape)      8/20 µs (IEC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current)      10/160 µs (FCC Part 68, 10/160 µs voltage wave shape)      5/200 µs (VDE 0433, 10/700 µs voltage wave shape)       0.2/310 µs (I3124, 0.5/700 µs voltage wave shape)      5/310 µs (ITU-T K.20/21, 10/700 µs voltage wave shape)      5/310 µs (FTZ R12, 10/700 µs voltage wave shape)      5/320 µs (FCC Part 68, 9/720 µs voltage wave shape)      10/560 µs (FCC Part 68, 10/560 µs voltage wave shape)      10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape)	ITSP	500 300 250 220 200 200 200 200 160 100	A
Non-repetitive peak on-state current (see Notes 2, 3 and 5)      20 ms (50 Hz) full sine wave      16.7 ms (60 Hz) full sine wave      1000 s 50 Hz/60 Hz a.c.	ITSM	55 60 1	A
Junction temperature	TJ	-40 to +150
Storage temperature range	Tstg	-65 to +150

NOTES: 1. See Figure 9 for voltage values at lower temperatures.
             2. Initially the TISP3xxxH3SL must be in thermal equilibrium.
             3. These non-repetitive rated currents are peak values of either polarity. The rated current values may 
                be applied to the R or T terminals. Additionally, both R and T terminals may have their rated current
                values applied simultaneously (in this case the G terminal return current will be the sum of the 
                currents applied to the R and T terminals). The surge may be repeated after the TISP3xxxH3SL returns
                to its initial conditions.
            4. See Figure 10 for impulse current ratings at other temperatures. Above 85, derate linearly to zero
               at 150 lead temperature.
           5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5
              A rated printed wiring track widths. See Figure 8 for the current ratings at other durations. Figure 8
              shows the R and T terminal current rating for simultaneous operation. In this condition, the G 
              terminal current will be 2xITSM(t), the sum of the R and T terminal currents. Derate current values at -
              0.61 %/ for ambient temperatures above 25.


Description

The TISP3xxxH3SL limits overvoltages between the telephone line Ring and Tip conductors and Ground. Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line.

The protector TISP3xxxH3SL consists of two symmetrical voltage-triggered bidirectional thyristors. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the diverted current subsides.