Mounting Style
: Through Hole
Breakover Current IBO Max
: +/- 600 mA
On-State Voltage
: +/- 3 V
Rated Repetitive Off-State Voltage VDRM
: +/- 200 V
Off-State Capacitance CO
: 110 pF
Breakover Voltage VBO
: +/- 290 V
Holding Current (Ih Max)
: +/- 150 mA
Off-State Leakage Current @ VDRM IDRM
: +/- 10 uA
Non Repetitive On-State Current
: 10 A
Maximum Operating Temperature
: + 70 C
Package / Case
: SOT-82
Specifications
|
RATING |
SYMBOL |
VALUE |
UNIT |
Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3)
8/20 µs (ANSI C62.41, open-circuit voltage wave shape 1.2/50 µs)
10/160 µs (FCC Part 68, open-circuit voltage wave shape 10/160 µs)
5/200 µs (VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 µs)
0.2/310 µs (RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 µs)
5/310 µs (CCITT IX K17/K20, open-circuit voltage wave shape 2 kV, 10/700 µs)
5/310 µs (FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 µs)
10/560 µs (FCC Part 68, open-circuit voltage wave shape 10/560 µs)
10/1000 µs (REA PE-60, open-circuit voltage wave shape 10/1000 µs) |
ITSP |
150
60
50
38
50
50
45
50 |
A |
| Non-repetitive peak on-state current, 50 Hz, 0.7 s (see Notes 1 and 2) |
ITSM |
10
|
A rms |
| Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A |
diT/dt |
250 |
A/µs |
| Junction temperature |
TJ |
150 |
°C |
| Operating free - air temperature range |
|
0 to 70 |
°C |
| Storage temperature range |
Tstg |
-40 to +150 |
°C |
| Lead temperature 1.5 mm from case for 10 s |
Tlead |
260 |
°C |
DescriptionTheTISP2290L is designed specifically fortelephone equipment protection against lightningand transients induced by a.c. power lines.These devices will supress voltage transientsbetween terminals A and C, B and C, and A andB.
Transients TISP2290L are initially clipped by zener action until the voltage rises to the breakover level, which causes the device to crowbar. The high crowbar holding current prevents d.c. latchup as the transient subsides.
These monolithic protection devices TISP2290L are fabricated in ion-implanted planar structures to ensure precise and matched breakover control and are virtually transparent to the system in normal operation.
TISP2290L Data Sheet
