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TISP2082F3

PinoutSpecifications RATING SYMBOL VALUE UNIT Repetitive peak off-state voltage (0°C <TJ < 70°C) '2072F3'2082F3 VDRM ± 58 ± 66 V Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3) 1/2 µs (Gas tube differential transient, open-circuit voltag...

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TISP2082F3: PinoutSpecifications RATING SYMBOL VALUE UNIT Repetitive peak off-state voltage (0°C <TJ < 70°C) '2072F3'2082F3 VDRM ± 58 ± 66 V Non-repetitive peak on-state pul...

TISP2082F3 Data Sheet

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Part Number:
TISP2082F3
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Pinout

Connection Diagram


Specifications

RATING
SYMBOL
VALUE
UNIT
Repetitive peak off-state voltage (0°C <TJ < 70°C) '2072F3
'2082F3
VDRM

± 58

± 66
V
Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3)
          1/2 µs (Gas tube differential transient, open-circuit voltage wave shape 1/2 µs) 120
          2/10 µs (FCC Part 68, open-circuit voltage wave shape 2/10 µs) 80
          8/20 µs (ANSI C62.41, open-circuit voltage wave shape 1.2/50 µs) 70
         10/160 µs (FCC Part 68, open-circuit voltage wave shape 10/160 µs) 60
         5/200 µs (VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 µs) 50
         0.5/310 µs (RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 µs) 38
         5/310 µs (CCITT IX K17/K20, open-circuit voltage wave shape 2 kV, 10/700 µs) 50
         5/310 µs (FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 µs) 50
         10/560 µs (FCC Part 68, open-circuit voltage wave shape 10/560 µs) 45
         10/1000 µs (REA PE-60, open-circuit voltage wave shape 10/1000 µs) 35
ITSP

120
80
70
60
50
38
50
50
45
35

 
A
Non-repetitive peak on-state current (see Notes 2 and 3)
50 Hz, 1 s
D Package
P Package
SL Package
ITSM

4

6

6
A rms
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A
diF/dt
250
A/µs
Junction temperature
TJ
-40 to +150
°C
Storage temperature range
Tstg
-40 to +150
°C



Description

These low voltage dual symmetrical transient voltage suppressor devices TISP2082F3 are designed to protect ISDN applications against transients caused by lightning strikes and a.c. power lines. Offered in two voltage variants to meet battery and protection requirements they are guaranteed to suppress and withstand the listed international lightning surges in both polarities. Transients are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar. The high crowbar holding current prevents d.c. latchup as the current subsides.

These monolithic protection devices TISP2082F3 are fabricated in ion-implanted planar structures to ensure precise and matched breakover control and are virtually transparent to the system innormal operation




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