TISP1082L

Mounting Style : Through Hole
On-State Voltage : 3 V
Off-State Leakage Current @ VDRM IDRM : +/- 10 uA
Non Repetitive On-State Current : 10 A
Maximum Operating Temperature : + 70 C
Breakover Current IBO Max : - 600 mA
Rated Repetitive Off-State Voltage VDRM : - 58 V
Holding Current (Ih Max) : - 150 mA
Breakover Voltage VBO : - 82 V
Package / Case : SOT-82
Off-State Capacitance CO : 300 pF


Specifications

RATING	SYMBOL	VALUE	UNIT
Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3)           8/20 µs (ANSI C62.41, open-circuit voltage wave shape 1.2/50 µs)          10/160 µs (FCC Part 68, open-circuit voltage wave shape 10/160 µs)           5/200 µs (VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 µs)           0.2/310 µs (RLM 88, open-circuit voltage wave shape1.5 kV, 0.5/700 µs)           5/310 µs (CCITT IX K17/K20, open-circuit voltage wave shape 2 kV, 10/700 µs)           5/310 µs (FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 µs)          10/560 µs (FCC Part 68, open-circuit voltage wave shape 10/560 µs)          10/1000 µs (REA PE-60, open-circuit voltage wave shape 10/1000 µs)	ITSP	150 60 50 38 50 50 45 50	A
Non-repetitive peak on-state current, 50 Hz, 0.7 s (see Notes 1 and 2)	ITSM	10	A rms
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A	diT/dt	250	A/s
Junction temperature	TJ	150	°C
Operating free - air temperature range		0 to 70	°C
Storage temperature range	Tstg	-40 to+150	°C
Lead temperature 1.5 mm from case for 10 s	Tlead	260	°C

Description

The TISP1082L is designed specifically for telephone line card protection against lightning and transients induced by a.c. power lines. These devices will supress voltage transients between terminals A and C, B and C, and A and B.

Negative transients TISP1082L are initially clipped by zener action until the voltage rises to the breakover level, which causes the device to crowbar. The high crowbar holding current prevents d.c. latchup as the transient subsides. Positive transients are clipped by diode action.

These   monolithic   protection   devices  TISP1082L are fabricated in ion-implanted planar structures to ensure precise and matched breakover control and are virtually transparent to the system in normal operation.