TIPL785A

The TIPL785A is a type of n-p-n monolithic darlington connected silicon power transistor.The TIPL785A has some un ique features listed below:(1)regged epltaxial plannar constructi- on;(2)designed for low -loss, high current, high-speed switching applications;(3) txo typically 320 ns at IC= 10A;(4) operating characteristics fully guaranteed at 100;(5)ICES is less than 1 mA at maximum rated VCE at 100.

TIPL785A also has some absolute maximum ratings at 25 case temperature( unless otherwise noted) :(1):collector-bases voltage is 210V;(2):collector-emiter Voltage(VBE=0) is 200 V;(3):collector-emitter voltage(IB=0) is 120 V;(4):con-tin uous device dissipation at (or below)25 case temperature is 80 V;(5):base-emitter voltage is 8 V;(6)continuous collector current is 10 A;(7):peak collector current is 15A;(8)peak parallel diode forward current is 10A; some elect-rical characteristics at 25 case temperature(unless noted)is shown below:(1):ICEV is 50 uA when VCE is 150 V and VBE us -1.5V to -8V;(2):ICES is 50 uA when VCES is 150 V and VBE is 0V;(3):ICEO is 50 uA when VCE is 120 V and IB is 0V;(4):IEBO is 4 mA when VEB is 5 V and IC is 0 V;(5):hFE is 500 when VCE is 5 V and IC is 500mA;(6): VCE is 1.2 V when IC is 4A and IB is 0.02A;(7):VBE is 1.8 V when IC is 4A and IB is 0.02A;VBE is 1.9 V when IC is 7A and IB is 0.03A;VBE is 2.2 V when IC is 10A and IB is 0.05A;VBE is 2.1 V when IC is 10A and IB is 0.05A.(8):VF is 3 V when IF is 10 A.