TIP33C

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 100 V
Packaging : Tube
Emitter- Base Voltage VEBO : 7 V
DC Collector/Base Gain hfe Min : 20
Package / Case : TO-247
Maximum DC Collector Current : 10 A
Maximum Operating Frequency : 3 MHz (Min)


Features:

·SGS-THOMSON PREFERRED SALESTYPES




Specifications

Symbol	Parameter		Value	Unit
		NPN	TIP33C
		PNP	TIP34C
VCBO	Collector-Base Voltage (IE= 0)		140	V
VCES	Collector-Emitter Voltage (VBE = -1.5V)		140	V
VCEO	Collector-Emitter Voltage (IB = 0)		100	V
VEBO	Emitter-Base Voltage (IC = 0)		7	V
IC	Collector Current		10	A
ICM	Collector Peak Current		2	A
IB	Base Current		3	A
Ptot	Total Dissipation at Tc 25		80	W
Tstg	Storage Temperature		-65 to 150
Tj	Max. Operating Junction Temperature		150

Description

The TIP33C is a silicon epitaxial-base NPN power transistors in TO-218 plastic package, intented for use in linear and switching applications.

The complementary PNP types is TIP34C.

Parameters:

Technical/Catalog Information	TIP33C
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	100V
Current - Collector (Ic) (Max)	10A
Power - Max	80W
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 3A, 4V
Vce Saturation (Max) @ Ib, Ic	1V @ 300mA, 3A
Frequency - Transition	-
Current - Collector Cutoff (Max)	700A
Mounting Type	Through Hole
Package / Case	TO-247-3
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	TIP33C TIP33C TIP33C TO218 ND TIP33CTO218ND TIP33C-TO218