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TIP33A: Transistors Bipolar (BJT) 10A 60V 80W NPN

TIP33A Data Sheet

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Part Number:: TIP33A
Mfg:: ON Semiconductor
Supply Ability:: 5000

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Upload time: 2025/1/12

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Transistors Bipolar (BJT) 15A 60V 80W NPN

Product Details

Quick Details

Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	60 V
Emitter- Base Voltage VEBO :	5 V	Maximum DC Collector Current :	10 A
DC Collector/Base Gain hfe Min :	40	Maximum Operating Frequency :	3 MHz
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SOT-93-3 (TO-218)	Packaging :	Tube

Description

Configuration :
Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 5 V
Packaging : Tube
Maximum Operating Frequency : 3 MHz
DC Collector/Base Gain hfe Min : 40
Maximum DC Collector Current : 10 A
Package / Case : SOT-93-3 (TO-218)

Application

·Designed for use in general purpose power amplifier and switching applications.

Specifications

SYMBOL	PARAMETER		CONDITIONS	VALUE	UNIT
V_CBO	Collector-base voltage	TIP33	Open emitter	40	V
		TIP33A		60
		TIP33B		80
		TIP33C		100
V_CEO	Collector-emitter voltage	TIP33	Open base	40	V
		TIP33A		60
		TIP33B		80
		TIP33C		100
V_EBO	Emitter-base voltage		Open collector	5	V
I_C	Collector current			10	A
I_CM	Collector current-peak			15	A
I_B	Base current			3	A
P_D	Total power dissipation		T_C =25	80	W
T_j	Junction temperature			150
T_stg	Storage temperature			-65~150

Description

TIP33A features

·With TO-3PN package
·Complement to type TIP34/34A/34B/34C
·DC current gain h_FE =40(Min)@I_C=1.0A

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TIP33A

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