Transistors Bipolar (BJT) PNP Epitaxial Sil
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Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 40 V |
Emitter- Base Voltage VEBO : | - 5 V | Maximum DC Collector Current : | 3 A |
DC Collector/Base Gain hfe Min : | 10 | Configuration : | Single |
Maximum Operating Frequency : | 3 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | TO-220 |
Packaging : | Bulk |
TIP32 | TIP32A | TIP32B | TIP32C | ||
Collector-Emitter-voltage B open | - VCEO | 40 V | 60 V | 80 V | 100 V |
Collector-Emitter-voltage E open | - VCES | 40 V | 60 V | 80 V | 100 V |
Emitter-Base-voltage C open | - VEBO | 5 V | |||
Power dissipation Verlustleistung without cooling ohne Kühlung with cooling mit Kühlung TA = 25°C TC = 25°C |
Ptot Ptot |
2 W 1) 40 W | |||
Collector current Kollektorstrom (dc) | - IC | 3 A | |||
Peak Collector current Kollektor-Spitzenstrom | - ICM | 5 A | |||
Base current Basisstrom | - IB | 1 A | |||
Junction temperature Sperrschichttemperatur Storage temperature Lagerungstemperatur |
Tj TS |
-55...+150°C -55.+150°C |
Technical/Catalog Information | TIP32 |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | PNP |
Voltage - Collector Emitter Breakdown (Max) | 40V |
Current - Collector (Ic) (Max) | 3A |
Power - Max | 40W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 3A, 4V |
Vce Saturation (Max) @ Ib, Ic | 1.2V @ 375mA, 3A |
Frequency - Transition | 3MHz |
Current - Collector Cutoff (Max) | 300A |
Mounting Type | Through Hole |
Package / Case | TO-220-3 (Straight Leads) |
Packaging | Tube |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | TIP32 TIP32 TIP32OS ND TIP32OSND TIP32OS |