TIP29TU

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Collector- Emitter Voltage VCEO Max : 40 V
Maximum Operating Frequency : 3 MHz
Maximum DC Collector Current : 1 A
Packaging : Bulk
DC Collector/Base Gain hfe Min : 40
Package / Case : TO-220


Description

The TIP29TU is designed as one kind of NPN silicon power transistor that has some points of absolute maximum ratings:(1)Collector-Base Voltage: 80 V;(2)Collector-Emitter Voltage: 40 V;(3)Emitter-Base Voltage: 5.0 V;(4)Collector Current: 1 A;(5)Collector Peak Current (repetitive): 3 A;(6)Base Current: 0.4 A;(7)Continuous device dissipation at (or below) 25°C case temperature: 30 W;(8)Operating And Storage Junction Temperature Range: -65 to +150 ;(9)Continuous device dissipation at (or below) 25°C free air temperature: 2 W;(10)Lead temperature 3.2 mm from case for 10 seconds: 250 °C.

The electrical characteristics of this device TIP29TU can be summarized as:(1)Collector Cutoff Current: 0.3 mA;(2)Emitter Cutoff Current: 1 mA;(3)Forward Current transfer ratio: 15 to 75;(4)Collector-Emitter Sustaining Voltage: 0.7 V;(5)Small signal forward current transfer ratio: 20;(6)Base-Emitter On Voltage: 1.3 V.

And the features of this device TIP29TU are:(1)designed for complementary use with the TIP30 series; (2)30 W at 25 °C case temperature; (3)1 A continuous collector current; (4)3 A peak collector current; (5)customer-specified selections available. If you want to know more information about the TIP29TU, please download the datasheet in www.seekic.com or www.chinaicmart.com .