TIP29CTU

Transistors Bipolar (BJT) NPN Epitaxial Sil

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SeekIC No. : 00204730 Detail

TIP29CTU: Transistors Bipolar (BJT) NPN Epitaxial Sil

floor Price/Ceiling Price

US $ .19~.29 / Piece | Get Latest Price
Part Number:
TIP29CTU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.29
  • $.24
  • $.21
  • $.19
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/1/7

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 100 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 1 A
DC Collector/Base Gain hfe Min : 15 Configuration : Single
Maximum Operating Frequency : 3 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-220
Packaging : Tube    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 100 V
Emitter- Base Voltage VEBO : 5 V
Packaging : Tube
DC Collector/Base Gain hfe Min : 15
Maximum Operating Frequency : 3 MHz
Maximum DC Collector Current : 1 A
Package / Case : TO-220


Pinout

  Connection Diagram


Description

The TIP29CTU is designed as one kind of PNP silicon power transistor that has five points of features:(1)designed for complementary use with the TIP30 series; (2)30 W at 25°C case temperature; (3)1 A continuous collector current; (4)customer-specified selections available; (5)3 A Peak Collector Current.

The absolute maximum ratings of the TIP29CTU can be summarized as:(1)Collector-base voltage (IE = 0): 120 V;(2)Collector-emitter voltage (IB = 0): 80 V;(3)Emitter-base voltage: 5 V;(4)Continuous collector current: 1 A;(5)Continuous base current: 0.4 A;(6)Continuous device dissipation at (or below) 25°C case temperature: 30 W;(7)Continuous device dissipation at (or below) 25°C free air temperature: 2 W;(8)Unclamped inductive load energy: 32 mJ;(9)Operating junction temperature range: -65 to +150 °C;(10)Storage temperature range: -65 to +150 °C;(11)Lead temperature 3.2 mm from case for 10 seconds: 260 °C.

The electrical characteristics of this device can be summarized as:(1)Collector-emitter breakdown voltage: 80 V;(2)Collector cut-off current: 0.2 mA;(3)Emitter cut-off current: -5 mA;(4)Forward current: 40;(5)transfer ratio: 15;(6)Collector-emitter saturation voltage: 0.7 V;(7)Base-emitter voltage: 1.3 V;(8)Small signal forward current transfer ratio: 20;(9)Small signal forward current transfer ratio: 3. If you want to know more information such as the electrical characteristics about the TIP29CTU, please download the datasheet in www.seekic.com or www.chinaicmart.com.




Parameters:

Technical/Catalog InformationTIP29CTU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)100V
Current - Collector (Ic) (Max)1A
Power - Max30W
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 200mA, 4V
Vce Saturation (Max) @ Ib, Ic700mV @ 125mA, 1A
Frequency - Transition3MHz
Current - Collector Cutoff (Max)300A
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names TIP29CTU
TIP29CTU



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