TIP29BTU

Configuration :
Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Collector- Emitter Voltage VCEO Max : 80 V
Maximum Operating Frequency : 3 MHz
Maximum DC Collector Current : 1 A
DC Collector/Base Gain hfe Min : 40
Package / Case : TO-220
Packaging : Rail


Pinout




Description

The TIP29BTU is designed as one kind of PNP silicon power transistor that has five points of features:(1)designed for complementary use with the TIP30 series; (2)30 W at 25°C case temperature; (3)1 A continuous collector current; (4)customer-specified selections available; (5)3 A Peak Collector Current.

The absolute maximum ratings of the TIP29BTU can be summarized as:(1)Collector-base voltage (IE = 0): 120 V;(2)Collector-emitter voltage (IB = 0): 80 V;(3)Emitter-base voltage: 5 V;(4)Continuous collector current: 1 A;(5)Continuous base current: 0.4 A;(6)Continuous device dissipation at (or below) 25°C case temperature: 30 W;(7)Continuous device dissipation at (or below) 25°C free air temperature: 2 W;(8)Unclamped inductive load energy: 32 mJ;(9)Operating junction temperature range: -65 to +150 °C;(10)Storage temperature range: -65 to +150 °C;(11)Lead temperature 3.2 mm from case for 10 seconds: 260 °C.

The electrical characteristics of this device can be summarized as:(1)Collector-emitter breakdown voltage: 80 V;(2)Collector cut-off current: 0.2 mA;(3)Emitter cut-off current: -5 mA;(4)Forward current: 40;(5)transfer ratio: 15;(6)Collector-emitter saturation voltage: 0.7 V;(7)Base-emitter voltage: 1.3 V;(8)Small signal forward current transfer ratio: 20;(9)Small signal forward current transfer ratio: 3. If you want to know more information such as the electrical characteristics about the TIP29BTU, please download the datasheet in www.seekic.com or www.chinaicmart.com.