TIP2955T

The TIP2955T is designed as one kind of PNP silicon power transistor that has four points of features:(1)designed for complementary use with the TIP3055 series; (2)90 W at 25°C case temperature; (3)15 A continuous collector current; (4)customer-specified selections available.

The absolute maximum ratings of the TIP2955T can be summarized as:(1)Collector-base voltage (IE = 0): -100 V;(2)Collector-emitter voltage (IB = 0): -70 V;(3)Emitter-base voltage: -7 V;(4)Continuous collector current: -15 A;(5)Continuous base current: -7 A;(6)Continuous device dissipation at (or below) 25°C case temperature: 90 W;(7)Continuous device dissipation at (or below) 25°C free air temperature: 3.5 W;(8)Unclamped inductive load energy: 62.5 mJ;(9)Operating junction temperature range: -65 to +150 °C;(10)Storage temperature range: -65 to +150 °C;(11)Lead temperature 3.2 mm from case for 10 seconds: 260 °C.

The electrical characteristics of this device can be summarized as:(1)Collector-emitter breakdown voltage: -60 V;(2)Collector cut-off current: -0.7 mA;(3)Voltage between base and emitter: -5 mA;(4)Emitter cut-off current: -5 mA;(5)Forward current: 20 to 70;(6)transfer ratio: 5;(7)Collector-emitter saturation voltage: -1.1 or -3 V;(8)Base-emitter voltage: -1.8 V;(9)Small signal forward current transfer ratio: 20;(10)Small signal forward current transfer ratio: 3. If you want to know more information such as the electrical characteristics about the TIP2955T, please download the datasheet in www.seekic.com or www.chinaicmart.com.