TIM3742-4SL

The TIM3742-4SL is designed as one kind of microwave power GaAs FET device that has four points of features:(1)high power: P1db = 36.5 dBm at 3.7 GHz to 4.2 GHz;(2)high gain: G1db = 10.5 dB at 3.7 GHz to 4.2 GHz;(3)internally matched type;(4)hermetically sealed package;(5)low intermodulation distortion: IM3= -45 dBc at Po 25.5 dBm, single carrier level.

The electrical characteristics of the TIM3742-4SL can be summarized as:(1)transconductance: 20 s;(2)pinch-off voltage: -0.5 to -2.5 V;(3)saturated drain current: 38 to 46 A;(4)gate-source breakdown voltage: -5 V;(5)thermal resistance: 0.6 to 0.8 /W.

The RF performance speifications of the TIM3742-4SL can be concluded into some points:(1)output power at 1 dB compression point: 35.5 to 36.5 dBm;(2)power gain at 1 dB compression point: 9.5 to 10.5 dB;(3)drain current: 1.1 to 1.3 A;(4)power added efficiency: 37 %;(5)channel temperature rise: 80 ;(6)3rd order intermodulation distortion: -42 to -45 dBc;(7)gain flatness: +/- 0.6 dB.

And the absolute maximum ratings of this device can be summarized as:(1)drain-source voltage: 15 V;(2)gate-source voltage: -5 V;(3)drain current: 3.5 A;(4)total power dissipation: 23 W;(5)channel temperature: 175 ;(6)storage temperature: -65 to +175 . If you want to know more information about the TIM3742-4SL, please download the datasheet in www.seekic.com or www.chinaicmart.com .