DescriptionThe TIM3742-16SL is designed as one kind of microwave power GaAs FET device that has four points of features:(1)low intermodulation distortion: IM3= -45 dBc at Po = 31.5 dBm, single carrier level;(2)high power: P1db = 42.5 dBm at 3.7 GHz to 4.2 GHz;(3)high gain: G1db = 9.5 dB at 3.7 GHz...
TIM3742-16SL: DescriptionThe TIM3742-16SL is designed as one kind of microwave power GaAs FET device that has four points of features:(1)low intermodulation distortion: IM3= -45 dBc at Po = 31.5 dBm, single carri...
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The TIM3742-16SL is designed as one kind of microwave power GaAs FET device that has four points of features:(1)low intermodulation distortion: IM3= -45 dBc at Po = 31.5 dBm, single carrier level;(2)high power: P1db = 42.5 dBm at 3.7 GHz to 4.2 GHz;(3)high gain: G1db = 9.5 dB at 3.7 GHz to 4.2 GHz;(4)broad band internally matched;(5)hermetically sealed package.
The electrical characteristics of the TIM3742-16SL can be summarized as:(1)transconductance: 3600 ms;(2)pinch-off voltage: -1 to -4.0 V;(3)saturated drain current: 10.5 to 14.0 A;(4)gate-source breakdown voltage: -5 V;(5)thermal resistance: 1.5 to 2.0 /W. If you want to know more information about the TIM3742-16SL, please download the datasheet in www.seekic.com or www.chinaicmart.com .