TIM1414-5-252

The TIM1414-5-252 is designed as one kind of microwave power GaAs FET device that has five points of features:(1)high power: P1db = 37.5 dBm at 13.75 GHz to 14.5 GHz;(2)high gain: G1db = 5.5 dB at 13.75 GHz to 14.5 GHz;(3)broad band internally matched;(4)hermetically sealed package.

The electrical characteristics of the TIM1414-5-252 can be summarized as:(1)transconductance: 1400 ms;(2)pinch-off voltage: -2.0 to -5.0 V;(3)saturated drain current: 5.0 to 5.7 A;(4)gate-source breakdown voltage: -5 V;(5)thermal resistance: 3.0 to 3.7 /W.

The RF performance speifications of the TIM1414-5-252 can be concluded into some points:(1)output power at 1 dB compression point: 37.0 to 37.5 dBm;(2)power gain at 1 dB compression point: 4.5 to 5.5 dB;(3)drain current: 2.0 to 2.5 A;(4)power added efficiency: 22 %;(5)channel temperature rise: 80 .

And the absolute maximum ratings of this device can be summarized as:(1)drain-source voltage: 15 V;(2)gate-source voltage: -5 V;(3)drain current: 5.7 A;(4)total power dissipation: 30 W;(5)channel temperature: 175 ;(6)storage temperature: -65 to +175 . If you want to know more information about the TIM1414-5-252, please download the datasheet in www.seekic.com or www.chinaicmart.com .