Features: · HIGH POWERP1dB=42.5dBm at 14.0GHz to 14.5GHz· HIGH GAING1dB=6.0dB at 14.0GHz to 14.5GHz· LOW INTERMODULATION DISTORTIONIM3(Min.)=−25dBc at Po=36dBm Single Carrier Level· BROAD BAND INTERNALLY MATCHED FET· HERMETICALLY SEALED PACKA...
TIM1414-18L: Features: · HIGH POWERP1dB=42.5dBm at 14.0GHz to 14.5GHz· HIGH GAING1dB=6.0dB at 14.0GHz to 14.5GHz· LOW INTERMODULATION DISTORTIONIM3(Min.)=−25dBc at Po=36dBm Si...
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Features: · LOW INTERMODULATION DISTORTIONIM3=-45 dBc at Pout= 29.0dBm·HIGH GAING1dB=6.0 dB at 10....
Features: · HIGH POWER P1dB=42.0dBm at 10.7GHz to 11.7GHz· HIGH GAIN G1dB=7.0dB at 10.7GHz to 11.7...
Features: HIGH POWER P1dB=33.5dBm at 10.7GHz to 11.7GHzHIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHzB...
Parameter | Symbol | Rating | Unit |
Drain-Source Voltage Gate-Source Voltage |
VDS VGS |
15 -5 |
V V |
Drain Current | IDS | 11.5 | A |
Total Power Dissipation (Tc= 25 ) | PT | 65 | W |
Channel Temperature | Tch | 175 | |
Storage | TSTG | -65 to +175 |