Features: · HIGH POWER P1dB=42.0dBm at 13.75GHz to 14.5GHz· HIGH GAIN G1dB=6.0dB at 13.75GHz to 14.5GHz· LOW INTERMODULATION DISTORTION IM3(Min.)=−25dBc at Po=36dBm Single Carrier Level· BROAD BAND INTERNALLY MATCHED FET· HERMETICALLY SEALED PACKAGESpecifications CHARACTERISTICS SYMB...
TIM1414-18L-252: Features: · HIGH POWER P1dB=42.0dBm at 13.75GHz to 14.5GHz· HIGH GAIN G1dB=6.0dB at 13.75GHz to 14.5GHz· LOW INTERMODULATION DISTORTION IM3(Min.)=−25dBc at Po=36dBm Single Carrier Level· BRO...
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Features: · LOW INTERMODULATION DISTORTIONIM3=-45 dBc at Pout= 29.0dBm·HIGH GAING1dB=6.0 dB at 10....
Features: · HIGH POWER P1dB=42.0dBm at 10.7GHz to 11.7GHz· HIGH GAIN G1dB=7.0dB at 10.7GHz to 11.7...
Features: HIGH POWER P1dB=33.5dBm at 10.7GHz to 11.7GHzHIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHzB...
CHARACTERISTICS | SYMBOL |
UNIT |
RATING |
Drain-Source Voltage |
VDS |
V |
15 |
Gate-Source Voltage |
VGS |
V |
-5 |
Drain Current |
IDS |
A |
11.5 |
Total Power Dissipation (Tc= 25 °C) |
PT |
W |
60.0 |
Channel Temperature |
Tch |
175 | |
Storage |
Tstg |
-65 to +175 |