TIM1112-4

The TIM1112-4 is designed as one kind of microwave power GaAs FET device that has four points of features:(1)high power: P1db = 36.5 dBm at 11.7 GHz to 12.7 GHz;(2)high gain: G1db = 7.5 dB at 11.7 GHz to 12.7 GHz;(3)broad band internally matched;(4)hermetically sealed package.

The electrical characteristics of the TIM1112-4 can be summarized as:(1)transconductance: 1200 ms;(2)pinch-off voltage: -2 to -5 V;(3)saturated drain current: 4.0 to 5.2 A;(4)gate-source breakdown voltage: -5 V;(5)thermal resistance: 2.9 to 3.5 /W.

The RF performance speifications of the TIM1112-4 can be concluded into some points:(1)output power at 1 dB compression point: 35.5 to 36.5 dBm;(2)power gain at 1 dB compression point: 6.5 to 7.5 dB;(3)drain current: 1.7 to 2.2 A;(4)power added efficiency: 24 %;(5)channel temperature rise: 70 .

And the absolute maximum ratings of this device can be summarized as:(1)drain-source voltage: 15 V;(2)gate-source voltage: -5 V;(3)drain current: 5.2 A;(4)total power dissipation: 30 W;(5)channel temperature: 175 ;(6)storage temperature: -65 to +175 . If you want to know more information about the TIM1112-4, please download the datasheet in www.seekic.com or www.chinaicmart.com .