Features: ·LOW INTERMODULATION DISTORTIONIM3=-45 dBc at Pout= 28.0dBm Single Carrier Level·HIGH GAING1dB=6.0 dB at 10.7 GHz to 11.7 GHz·BROAD BAND INTERNALLY MATCHED FET·HIGH POWER P1dB=39.5 dBm at 10.7 GHz to 11.7 GHz·HERMETICALLY SEALED PACKAGESpecifications CHARACTERISTICS SYMBO...
TIM1011-8L: Features: ·LOW INTERMODULATION DISTORTIONIM3=-45 dBc at Pout= 28.0dBm Single Carrier Level·HIGH GAING1dB=6.0 dB at 10.7 GHz to 11.7 GHz·BROAD BAND INTERNALLY MATCHED FET·HIGH POWER P1dB=39.5 dBm at ...
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Features: · LOW INTERMODULATION DISTORTIONIM3=-45 dBc at Pout= 29.0dBm·HIGH GAING1dB=6.0 dB at 10....
Features: · HIGH POWER P1dB=42.0dBm at 10.7GHz to 11.7GHz· HIGH GAIN G1dB=7.0dB at 10.7GHz to 11.7...
Features: HIGH POWER P1dB=33.5dBm at 10.7GHz to 11.7GHzHIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHzB...
CHARACTERISTICS | SYMBOL | UNIT | RATING |
Drain-Source Voltage | VDS | V | 15 |
Gate-Source Voltage | VGS | V | -5 |
Drain Current | IDS | A | 10.4 |
Total Power Dissipation (Tc= 25 °C) | PT | W | 60 |
Channel Temperature | Tch | 175 | |
Storage Temperature | Tstg | -65 to +175 |