Features: ·HIGH POWER P1dB=36.5dBm at 10.7GHz to 11.7GHz·HIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHz·BROAD BAND INTERNALLY MATCHED FET·HERMETICALLY SEALED PACKAGESpecifications Parameter Symbol Rating Unit Drain to source voltage VDSS 15 V Gate to source voltage VGSS -5 V Dra...
TIM1011-4L: Features: ·HIGH POWER P1dB=36.5dBm at 10.7GHz to 11.7GHz·HIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHz·BROAD BAND INTERNALLY MATCHED FET·HERMETICALLY SEALED PACKAGESpecifications Parameter Symbol...
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Features: · LOW INTERMODULATION DISTORTIONIM3=-45 dBc at Pout= 29.0dBm·HIGH GAING1dB=6.0 dB at 10....
Features: · HIGH POWER P1dB=42.0dBm at 10.7GHz to 11.7GHz· HIGH GAIN G1dB=7.0dB at 10.7GHz to 11.7...
Features: HIGH POWER P1dB=33.5dBm at 10.7GHz to 11.7GHzHIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHzB...
Parameter | Symbol | Rating | Unit |
Drain to source voltage | VDSS | 15 | V |
Gate to source voltage | VGSS | -5 | V |
Drain current | IDS | 5.2 | A |
Total Power Dissipation (Tc= 25) | PT | 42.8 | W |
Cannel temperature | Tch | 175 | |
Storage temperature | Tstg | -65 ~ 175 |