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TIL917B

Features: Gallium-Arsenide Diode Infrared SourceSource Is Optically Coupled to Silicon N-P-N Darlington PhototransistorChoice of One, Two or Four ChannelsChoice of Four Current-Transfer RatiosHigh-Voltage Electrical Isolation . . . 7.5 kV Peak (5.3 kV rms)Plastic Dual-In-Line PackagesUL Listed Fi...

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SeekIC No. : 004519218 Detail

TIL917B: Features: Gallium-Arsenide Diode Infrared SourceSource Is Optically Coupled to Silicon N-P-N Darlington PhototransistorChoice of One, Two or Four ChannelsChoice of Four Current-Transfer RatiosHigh-V...

TIL917B Data Sheet

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Part Number:
TIL917B
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

 Gallium-Arsenide Diode Infrared Source
 Source Is Optically Coupled to Silicon N-P-N Darlington Phototransistor
 Choice of One, Two or Four Channels
 Choice of Four Current-Transfer Ratios
 High-Voltage Electrical Isolation . . . 7.5 kV Peak (5.3 kV rms)
 Plastic Dual-In-Line Packages
 UL Listed File No. E65085


Specifications

Input-to-output voltage (see Note 1) . . . . . . . . . . . . . . . . . . . . .  . . . . ±7.5 kV peak or dc (±5.3 kV rms)
Collector-emitter voltage (see Note 2)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . .  . .  . . . . . . . . . . .35 V
Emitter-collector voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . .  . . . . . . . . . . .7 V
Input diode reverse voltage  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . .5 V
Input diode continuous forward current at (or below) 25°C free-air temperature (see Note 3)  . .50 mA
Continuous power dissipation at (or below) 25°C free-air temperature:
       Phototransistor (see Note 4)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .150 mW
       Input diode plus phototransistor per channel (see Note 5)  . . . . . . . . . . . . . . . . . . . . . . . . .200 mW
Operating free-air temperature, TA  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . .55°C to 100°C
Storage temperature range  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . .  . . . . . .55°C to 125°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds  . . . . . . . .  . . . . . . . . . . . . . . . . . .260°C


Description

These optocouplers consist of a gallium-arsenide light-emitting diode and a silicon n-p-n Darlington phototransistor per channel. The TIL917 has one channel in a 4-pin package, the TIL918 has two channels in an 8-pin package, and the TIL919 has four channels in a 16-pin package. The standard devices, TIL917, TIL918, and TIL919, are tested for a current-transfer ratio of 20% minimum. Devices selected for a current-transfer ratio of 50%, 100%, and 200% minimum are designated with the suffix A, B, and C, respectively.




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