DescriptionThe TIL318 is designed as one kind of P-N gallium arsenide infrared-emitting diode device that has four points of features:(1) B versions especially designed for low degradation and are direct replacements for the A versions;(2)spectrally and mechanically compatible with TIL81 and TI...
TIL318: DescriptionThe TIL318 is designed as one kind of P-N gallium arsenide infrared-emitting diode device that has four points of features:(1) B versions especially designed for low degradation and are ...
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The TIL318 is designed as one kind of P-N gallium arsenide infrared-emitting diode device that has four points of features:(1)"B" versions especially designed for low degradation and are direct replacements for the "A" versions;(2)spectrally and mechanically compatible with TIL81 and TIL99 phototransistors;(3)typical applications include card readers, encoders, intrusion alarms, sector sensors, level indicators and beginning-of-tape / end-of-tape indicators;(4)TIL31HR2 includes high-reliability processing and lot acceptance.
The absolute maximum ratings of the TIL318 can be summarized as:(1)reverse voltage at 25 case temperature: 5 V;(2)continuous forward current at 25 case temperature: 200 mA;(3)operating case temperature range: -65 to +150 ;(4)storage temperature range: -65 to +150 ;(5)lead temperature 1.6 mm (1/16 inch) from case for 10 seconds: 240 . If you want to know more information about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .