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TICP107M

Features: 1 A Continuous On-State Current 15 A Surge-Current Glass Passivated Wafer 400 V to 600 V Off-State Voltage IGT 50 µA min, 200 µA max di/dt 100A/µs Package OptionsPinoutSpecifications RATING SYMBOL VALUE UNIT Repetitive peak off-state voltage (see Note 1) TIC...

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SeekIC No. : 004519131 Detail

TICP107M: Features: 1 A Continuous On-State Current 15 A Surge-Current Glass Passivated Wafer 400 V to 600 V Off-State Voltage IGT 50 µA min, 200 µA max di/dt 100A/µs Package OptionsPinoutSp...

TICP107M Data Sheet

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Part Number:
TICP107M
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

 1 A Continuous On-State Current
15 A Surge-Current
Glass Passivated Wafer
400 V to 600 V Off-State Voltage
IGT 50 µA min, 200 µA max
di/dt 100A/µs
Package Options




Pinout

Connection Diagram




Specifications

RATING SYMBOL VALUE UNIT
Repetitive peak off-state voltage (see Note 1) TICP107D
TICP107M		 VDRM 400
600		 V
Repetitive peak reverse voltage TICP107D
TICP107M		 VRRM 400
600		 V
Continuous on-state current at (or below) 85°C case temperature (see Note 2) IT(RMS) 2 A
Surge on-state current (see Note 3) ITSM 15 A
Peak positive gate current (pulse width £ 300 ms) IGM 0.2 A
Average gate power dissipation (see Note 4) di/dt 100 A/µs
Operating case temperature range TC -40 to +110 °C
Storage temperature range Tstg -40 to +125 °C
Lead temperature 3.2 mm from case for 10 seconds TL 230 °C



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