Features: 2 A Continuous On-State Current 15 A Surge-Current Glass Passivated Wafer 400 V to 600 V Off-State Voltage Max IGT of 200 µA Package OptionsPinoutSpecifications RATING SYMBOL VALUE UNIT Repetitive peak off-state voltage (see Note 1) TICP106DTICP106M VDRM 400600 V ...
TICP106M: Features: 2 A Continuous On-State Current 15 A Surge-Current Glass Passivated Wafer 400 V to 600 V Off-State Voltage Max IGT of 200 µA Package OptionsPinoutSpecifications RATING SYMBOL ...
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2 A Continuous On-State Current
15 A Surge-Current
Glass Passivated Wafer
400 V to 600 V Off-State Voltage
Max IGT of 200 µA
Package Options
RATING | SYMBOL | VALUE | UNIT | |
Repetitive peak off-state voltage (see Note 1) | TICP106D TICP106M |
VDRM | 400 600 |
V |
Repetitive peak reverse voltage | TICP106D TICP106M |
VDRM | 400 600 |
V |
Continuous on-state current at (or below) 85°C case temperature (see Note 2) | IT(RMS) | 2 | A | |
Surge on-state current (see Note 3) | ITSM | 15 | A | |
Peak positive gate current (pulse width £ 300 s) | IGM | 0.2 | A | |
Average gate power dissipation (see Note 4) | PG(AV) | 0.3 | W | |
Operating case temperature range | TC | -40 to +110 | °C | |
Storage temperature range | Tstg | -40 to +125 | °C | |
Lead temperature 3.2 mm from case for 10 seconds | TL | 230 | °C |