Features: .OPTIMIZED FOR SSB.30 MHz .50 VOLTS .IMD -30 dB .COMMON EMITTER .GOLD METALLIZATION·POUT = 150 W PEP MIN. WITH 14 dB GAINSpecifications Symbol Parameter Value Unit VCBO Collector-Base Voltage 110 V VCES Collector-Emitter Voltage 55 V VEBO Emitter-Base ...
THX15: Features: .OPTIMIZED FOR SSB.30 MHz .50 VOLTS .IMD -30 dB .COMMON EMITTER .GOLD METALLIZATION·POUT = 150 W PEP MIN. WITH 14 dB GAINSpecifications Symbol Parameter Value Unit VCBO Col...
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Industrial Motion & Position Sensors RESISTIVE & OPTICAL
Symbol | Parameter |
Value |
Unit |
VCBO | Collector-Base Voltage |
110 |
V |
VCES | Collector-Emitter Voltage |
55 |
V |
VEBO | Emitter-Base Voltage |
4.0 |
V |
IC | Device Current |
10 |
A |
PDISS | Power Dissipation |
233 |
W |
TJ | Junction Temperature |
+200 |
|
TSTG | Storage Temperature |
65 to 150 |
The SD1727 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB communications.THX15 utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions.
The THX15 is designed as one kind of 50 V epitaxial silicon NPN planar transistor that utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. Features of the THX15 are:(1)optimized for SSB; (2)30 MHz; (3)50 volts; (4)IMD -30 dB; (5)common emitter; (6)gold metallization; (7)Pout=150 W pep min. with 14 dB gain.
The absolute maximum ratings of the THX15 can be summarized as:(1)Collector-Base Voltage: 110 V;(2)Collector-Emitter Voltage: 55 V;(3)Emitter-Base Voltage: 4.0 V;(4)Device Current: 10 A;(5)Power Dissipation: 233 W;(6)Junction Temperature: +200 °C;(7)Storage Temperature: - 65 to +150 °C. If you want to know more information such as the electrical characteristics about the THX15, please download the datasheet in www.seekic.com or www.chinaicmart.com.