THS9000

Features: ` High Dynamic Range OIP3 = 36 dBm NF < 4.5 dB` Single Supply Voltage` High Speed VS = 3 V to 5 V IS = Adjustable` Input / Output Impedance 50 PinoutSpecifications Supply voltage, GND to VS 5.5 V Input voltage GND to VS Continuous power dissipation See Dissipation ...

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THS9000 Picture
SeekIC No. : 004518959 Detail

THS9000: Features: ` High Dynamic Range OIP3 = 36 dBm NF < 4.5 dB` Single Supply Voltage` High Speed VS = 3 V to 5 V IS = Adjustable` Input / Output Impedance 50 PinoutSpecifications Supply voltage, ...

floor Price/Ceiling Price

Part Number:
THS9000
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/4

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Product Details

Description



Features:

` High Dynamic Range
OIP3 = 36 dBm
NF < 4.5 dB
` Single Supply Voltage
` High Speed
VS = 3 V to 5 V
IS = Adjustable
` Input / Output Impedance
50



Pinout

  Connection Diagram


Specifications

Supply voltage, GND to VS
5.5 V
Input voltage
GND to VS
Continuous power dissipation
See Dissipation Ratings Table
Maximum junction temperature, TJ
150
Maximum junction temperature, continuous operation, long term reliability, TJ (2)
125
Storage temperature, Tstg
-65 to 150
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
300
ESD Ratings: HBM
2000
CDM
1500
MM
100

(1) The absolute maximum ratings under any condition is limited by the constraints of the silicon process. Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied.
(2) The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature may result in reduced reliability and/or lifetime of the device.




Description

The THS9000 is a medium power, cascadeable, gain block optimized for high IF frequencies. The amplifier incorporates internal impedance matching to 50 . The part mounted on the standard EVM achieves greater than 15-dB input and output return loss from 50 MHz to 325 MHz with VS = 5 V, R(BIAS) = 237 , L(COL) = 470 nH. THS9000 is designed requires only 2 dc-blocking capacitors, 1 power-supply bypass capacitor, 1 RF choke, and 1 bias resistor.




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