Features: ` High Dynamic Range OIP3 = 36 dBm NF < 4.5 dB` Single Supply Voltage` High Speed VS = 3 V to 5 V IS = Adjustable` Input / Output Impedance 50 PinoutSpecifications Supply voltage, GND to VS 5.5 V Input voltage GND to VS Continuous power dissipation See Dissipation ...
THS9000: Features: ` High Dynamic Range OIP3 = 36 dBm NF < 4.5 dB` Single Supply Voltage` High Speed VS = 3 V to 5 V IS = Adjustable` Input / Output Impedance 50 PinoutSpecifications Supply voltage, ...
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Supply voltage, GND to VS |
5.5 V | |
Input voltage |
GND to VS | |
Continuous power dissipation |
See Dissipation Ratings Table | |
Maximum junction temperature, TJ |
150 | |
Maximum junction temperature, continuous operation, long term reliability, TJ (2) |
125 | |
Storage temperature, Tstg |
-65 to 150 | |
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds |
300 | |
ESD Ratings: | HBM |
2000 |
CDM |
1500 | |
MM |
100 |
(1) The absolute maximum ratings under any condition is limited by the constraints of the silicon process. Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied.
(2) The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature may result in reduced reliability and/or lifetime of the device.
The THS9000 is a medium power, cascadeable, gain block optimized for high IF frequencies. The amplifier incorporates internal impedance matching to 50 . The part mounted on the standard EVM achieves greater than 15-dB input and output return loss from 50 MHz to 325 MHz with VS = 5 V, R(BIAS) = 237 , L(COL) = 470 nH. THS9000 is designed requires only 2 dc-blocking capacitors, 1 power-supply bypass capacitor, 1 RF choke, and 1 bias resistor.