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THS4631

Features: ` High Bandwidth: 325 MHz in Unity Gain 210 MHz Gain Bandwidth Product` High Slew Rate: 900 V/s (G = 2) 1000 V/s (G = 5)` Low Distortion of 76 dB, SFDR at 5 MHz` Maximum Input Bias Current: 100 pA` Input Voltage Noise: 7 nV/ÖHz` Maximum Input Offset Voltage: 500 V at 25` Low O...

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SeekIC No. : 004518908 Detail

THS4631: Features: ` High Bandwidth: 325 MHz in Unity Gain 210 MHz Gain Bandwidth Product` High Slew Rate: 900 V/s (G = 2) 1000 V/s (G = 5)` Low Distortion of 76 dB, SFDR at 5 MHz` Maximum Input Bias C...

THS4631 Data Sheet

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Part Number:
THS4631
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

` High Bandwidth:
   325 MHz in Unity Gain
   210 MHz Gain Bandwidth Product
` High Slew Rate:
   900 V/s (G = 2)
   1000 V/s (G = 5)
` Low Distortion of 76 dB, SFDR at 5 MHz
` Maximum Input Bias Current: 100 pA
` Input Voltage Noise: 7 nV/ÖHz
` Maximum Input Offset Voltage: 500 V at 25
` Low Offset Drift: 2.5 V/
` Input Impedance: 109 || 3.9 pF
` Wide Supply Range: ± 5 V to ± 15 V
` High Output Current: 95 mA


Application

· Wideband Photodiode Amplifier
· High-Speed Transimpedance Gain Stage
· Test and Measurement Systems
· Current-DAC Output Buffer
· Active Filtering
· High-Speed Signal Integrator
· High-Impedance Buffer


Pinout

Connection Diagram


Specifications

   
UNITS
VS Supply voltage, VS to VS+
33 V
VI Input voltage
±VS
IO(2) Output current
150 mA
  Continuous power dissipation
See Dissipation Rating Table
TJ Maximum junction temperature(2)
150
TA Operating free-air temperature, continues operation, long-term reliability(2)
125
Tstg Storage temperature range
65 to 150
  Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
300
  ESD ratings: HBM
1000V
CDM
1500V
MM
100V

(1) The absolute maximum ratings under any condition is limited by the constraints of the silicon process. Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied.
(2) The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature may result in reduced reliability and/or lifetime of the device.


Description

The THS4631 is a high-speed, FET-input operational amplifier designed for applications requiring wideband operation, high-input impedance, and high-power supply voltages. By providing a 210-MHz gain bandwidth product, ±15-V supply operation, and 100-pA input bias current, the THS4631 is capable of simultaneous wideband transimpedance gain and large output signal swing. The fast 1000 V/s slew rate allows for fast settling times and good harmonic distortion at high frequencies. Low current and voltage noise allow amplification of extremely low-level input signals while still maintaining a large sig-nal-to-noise ratio.

The characteristics of the THS4631 make it ideally suited for use as a wideband photodiode amplifier.Photodiode output current is a prime candidate for transimpedance amplification as shown below. Other potential applications of THS4631 include test and measurement systems requiring high-input impedance, ADC and DAC buffering, high-speed integration, and active filtering.

The THS4631 is offered in an 8-pin SOIC (D), and the 8-pin SOIC (DDA) and MSOP (DGN) with PowerPAD™ package.




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