THN6601B Selling Leads, Price trend, THN6601B DataSheet download, circuit diagram from SeekIC.com

Features: · High gain bandwidth productfT = 7 GHz· High power gain|S21|2 = 7 dB @ VCE = 5 V, IC = 100 mA, f = 1 GHz· High powerPOUT = 32 dBm (1.5 W) @ VCE = 6 V, ICQ = 5 mA, f = 465 MHzApplication· UHF and VHF wide band amplifierPinoutSpecifications Parameter Symbol Ratings Units Co...

See larger image

SeekIC No. : 004518780 Detail

THN6601B: Features: · High gain bandwidth productfT = 7 GHz· High power gain|S21|2 = 7 dB @ VCE = 5 V, IC = 100 mA, f = 1 GHz· High powerPOUT = 32 dBm (1.5 W) @ VCE = 6 V, ICQ = 5 mA, f = 465 MHzApplication· ...

THN6601B Data Sheet

Get Latest Price

Part Number:: THN6601B
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

SeekIC Buyer Protection PLUS - newly updated for 2013!

Escrow Protection.
Guaranteed refunds.
Secure payments.
Learn more >>

Month Sales

268 Transactions

Rating

evaluate (4.8 stars)

Upload time: 2025/1/12

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.

Recent History
What is this?

THN6201 evaluate
Features: · Low Noise Figure NF = 1.1 dB Typ. @ f = 1 GHz, VCE = 3 V, IC = 5 mA NF = 1.5 dB Typ. @...
THN6201E evaluate
Features: · Low Noise FigureNF = 1.1 dB Typ. @ f = 1 GHz, VCE = 3 V, IC = 5 mANF = 1.5 dB Typ. @ f...
THN6201S evaluate
Features: · Low Noise FigureNF = 1.1 dB Typ. @ f = 1 GHz, VCE = 3 V, IC = 5 mANF = 1.5 dB Typ. @ f...

Product Details

Description

Features:

· High gain bandwidth product
f_T = 7 GHz
· High power gain
|S₂₁|² = 7 dB @ V_CE = 5 V, I_C= 100 mA, f = 1 GHz
· High power
P_OUT = 32 dBm (1.5 W) @ V_CE = 6 V, I_CQ = 5 mA, f = 465 MHz

Application

· UHF and VHF wide band amplifier

Pinout

Specifications

Parameter	Symbol	Ratings	Units
Collector to Base Breakdown Voltage	BV_CBO	20	V
Collector to Emitter Breakdown Voltage	BV_CEO	12	V
Emitter to Base Breakdown Voltage	BV_EBO	3	V
Collector Current	I_C	500	mA
Total Power Dissipation	P_tot	1.5	W
Junction Temperature	T_J	150
Storage Temperature	T_stg	-65 ~ 150

Description

THN6601B RF Medium Power Transistor (1.5W)

THN6601B is used as power amplifier for VHF and UHF band applications, especially FRS

Customers Who Bought This Item Also Bought

BT06蓝牙串口模块 51单片机兼容HC-06
US $$1.30 - 1.50 / Piece

Supply Ability:100Day

View details
PM150RSA060-S81AH0G,IGBT
US $$41.70 - 42.00 / Piece

Supply Ability:10Day

View details
ARDUINO IIC/I2C 液晶模块，IGBT
US $$4.50 - 4.80 / Piece

Supply Ability:100Day

View details
DS-4008HCI English version video capture card Hai Kang
US $$120.00 - 120.00 / Piece

Supply Ability:120Week

View details
2DI300A-050 MODULE
US $$30.00 - 30.00 / Piece

Supply Ability:100Day

View details

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.

THN6601B

product image

floor Price/Ceiling Price

Price Break

Month Sales

Rating

Payment Methods

Recent History

Description

Customers Who Bought This Item Also Bought

Discrete Semiconductor Products(7459)

Cables, Wires - Management(4448)

Boxes, Enclosures, Racks(2218)

RF and RFID(1780)

Kits(573)

Circuit Protection(3850)