THN6501 Series

      Here is the description about THN6501 Series of the NPN SiGe RF TRANSISTOR.
      Here are the features of THN6501 Series: Low Noise Figure: NF = 1.0 dB Typ. @ f = 1 GHz, Vce = 3V, Ic = 7m; High Power Gain: MAG = 15 dB Typ. @ f = 1 GHz, Vce = 3V, Ic = 7mA; High Transition Frequency: ft = 9 GHz Typ. @ Vce = 3 V, Ic = 30 mA.
      Here are the ELECTRICAL SPECIFICATIONS Absolute Maximum Ratings of THN6501 Series (TA = 25).  Collector to Base Breakdown Voltage is 20V. Collector to Emitter Breakdown Voltage is 12V. Emitter to Base Breakdown Voltage is 2.5V. Collector Current (DC) is 100mA. Total Power Dissipation is 150mW. Storage Temperature is from -65 to 150. Operating Junction Temperature is 150.
      At present there is not too much information about this model. If you are willing to find more about the THN6501 Series, please pay attention to our web! We will promptly update the relevant information. Above information is all relevant information about the THN6501 Series, if we find any new information, we will summarize for you. You can find it in www.ChinaICMart.com or www.seekic.com. Welcome to contact with us.