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THN6501F

Features: · Low Noise FigureNF = 1.0 dB at f = 1 GHz, VCE= 3 V, IC= 7 mA · High GainMAG = 11.5 dB at f = 1 GHz, VCE= 10 V, IC= 20 mA· High Transition FrequencyfT = 7 GHz at f = 1 GHz, VCE=10 V, IC=30 mAApplicationLNA and wide band amplifier up to GHz rangePinoutSpecifications Symbol Para...

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THN6501F: Features: · Low Noise FigureNF = 1.0 dB at f = 1 GHz, VCE= 3 V, IC= 7 mA · High GainMAG = 11.5 dB at f = 1 GHz, VCE= 10 V, IC= 20 mA· High Transition FrequencyfT = 7 GHz at f = 1 GHz, VCE=10 V, IC=3...

THN6501F Data Sheet

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Part Number:
THN6501F
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Low Noise Figure
NF = 1.0 dB at f = 1 GHz, VCE= 3 V, IC= 7 mA
· High Gain
MAG = 11.5 dB at f = 1 GHz, VCE= 10 V, IC= 20 mA
· High Transition Frequency
fT = 7 GHz at f = 1 GHz, VCE=10 V, IC=30 mA






Application

LNA and wide band amplifier up to GHz range




Pinout






Specifications

Symbol
Parameter
Ratings
Unit
VCBO
 Collector to Base Breakdown Voltage
25
V
VCEO
 Collector to Emitter Breakdown Voltage
12
V
VEBO
 Emitter to Base Breakdown Voltage
2.5
V
IC
 Collector Current (DC)
100

mA
PT
 Total Power Dissipation
400

mW
TSTG
 Storage Temperature
-65 ~150
TJ
 Operating Junction Temperature
150





Description

THN6501F Low noise and high gain small signal RF transistor
THN6501F is used as low noise amplifier, gain amplifier, mixer and VCO for VHF and UHF band applications, such as FRS, cordless phone, TV tuner, RF modulator, wireless LAN and GPS.





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