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THN6501

Features: · Low Noise Figure NF = 1.0 dB Typ. @ f = 1 GHz, VCE = 3V, IC = 7mA · High Power Gain MAG = 15 dB Typ. @ f = 1 GHz, VCE = 3V, IC = 7mA ·High Transition Frequency fT = 9 GHz Typ. @ VCE = 3 V, IC = 30 mAApplication·LNA and wide band amplifier up to GHz rangeSpecifications Symbol Pa...

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SeekIC No. : 004518773 Detail

THN6501: Features: · Low Noise Figure NF = 1.0 dB Typ. @ f = 1 GHz, VCE = 3V, IC = 7mA · High Power Gain MAG = 15 dB Typ. @ f = 1 GHz, VCE = 3V, IC = 7mA ·High Transition Frequency fT = 9 GHz Typ. @ VCE = ...

THN6501 Data Sheet

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Part Number:
THN6501
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Low Noise Figure
  NF = 1.0 dB Typ. @ f = 1 GHz, VCE = 3V, IC = 7mA
· High Power Gain
  MAG = 15 dB Typ. @ f = 1 GHz, VCE = 3V, IC = 7mA
· High Transition Frequency
  fT = 9 GHz Typ. @ VCE = 3 V, IC = 30 mA


Application

·LNA and wide band amplifier up to GHz range


Specifications

Symbol Parameter
Ratings
Units
VCBO Collector to Base Breakdown Voltage
20
V
VCEO Collector to Emitter Breakdown Voltage
12
V
VEBO Emitter to Base Breakdown Voltage
2.5
V
IC Collector Current (DC)
100
mA
PT Total Power Dissipation
150
mW
TSTG Storage Temperature
-65 ~ 150
TJ Operating Junction Temperature
150
Caution : ESD sensitive device


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