THN6301U

The THN6301S is designed as one kind of NPN planer RF transistor that is a low Noise figure and good associated gain performance at UHF,VHF and Microwave frequencies. Also this device is suitable for a high density surface mount since transistor has been SOT23 package.

Features of the THN6301S are:(1)low noise figure N.F = 1.1dB TYP. @ f=1GHz, VCE=8V, Ic=5mA; (2)high gain MAG = 17dB TYP. @ f=1GHz, VCE=8V, Ic=15mA; (3)high transition frequency fT = 10GHz TYP. @ f=1GHz, VCE=8V, Ic=15mA.

The absolute maximum ratings of the THN6301S can be summarized as:(1)Collector-Base Voltage: 25 V;(2)Collector-Emitter Voltage: 12 V;(3)Emitter-Base Voltage: 2.5 V;(4)Collector Current (DC): 65 mA;(5)Total Power Dissipation: 150 mW;(6)Storage Temperature: -65 to 150 ;(7)Operating Junction Temperature: 150 .

The electrical characteristics of THN6301S can be summarized as:(1)Collector-Base Voltage: 20 to 25 V;(2)Collector-Emitter Voltage: 12 to 14 V;(3)Collector-Cut-off current: 100 nA;(4)Emitter-Cut-off current: 100 nA;(5)D.C current Gain: 100 to 300;(6)Transition Frequency: 10 GHz;(7)Collector-Base Capacitance: 0.55 pF. If you want to know more information about THN6301S, please download the datasheet in www.seekic.com or www.chinaicmart.com .