THN6301S Selling Leads, Price trend, THN6301S DataSheet download, circuit diagram from SeekIC.com

PinoutDescription Low noise and high gain small signal RF transistor THN6301S is used as low noise amplifier, gain amplifier, mixer and VCO for VHF and UHF band applications, such as FRS, cordless phone, TV tuner, RF modulator, wireless LAN and GPS. The THN6301S is designed as one k...

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SeekIC No. : 004518770 Detail

THN6301S: PinoutDescription Low noise and high gain small signal RF transistor THN6301S is used as low noise amplifier, gain amplifier, mixer and VCO for VHF and UHF band applications, such as FR...

THN6301S Data Sheet

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Part Number:: THN6301S
Supply Ability:: 5000

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1~5000

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Upload time: 2025/1/12

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Product Details

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Description

Low noise and high gain small signal RF transistor

THN6301S is used as low noise amplifier, gain amplifier, mixer and VCO for VHF and UHF band applications, such as FRS, cordless phone, TV tuner, RF modulator, wireless LAN and GPS.

The THN6301S is designed as one kind of NPN planer RF transistor that is a low Noise figure and good associated gain performance at UHF,VHF and Microwave frequencies. Also this device is suitable for a high density surface mount since transistor has been SOT23 package.

Features of the THN6301S are:(1)low noise figure N.F = 1.1dB TYP. @ f=1GHz, VCE=8V, Ic=5mA; (2)high gain MAG = 16.5dB TYP. @ f=1GHz, VCE=8V, Ic=15mA; (3)high transition frequency fT = 10GHz TYP. @ f=1GHz, VCE=8V, Ic=15mA.

The absolute maximum ratings of the THN6301S can be summarized as:(1)Collector-Base Voltage: 25 V;(2)Collector-Emitter Voltage: 12 V;(3)Emitter-Base Voltage: 2.5 V;(4)Collector Current (DC): 65 mA;(5)Total Power Dissipation: 150 mW;(6)Storage Temperature: -65 to 150 ;(7)Operating Junction Temperature: 150 . If you want to know more information about THN6301S, please download the datasheet in www.seekic.com or www.chinaicmart.com .

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THN6301S

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