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THN6301

Features: o Low Noise Figure NF = 1.1 dB Typ. @ f = 1 GHz, VCE = 8 V, IC = 5 mAo High Power Gain MAG =18 dB Typ. @ f = 1 GHz, VCE = 8 V, IC =15 mAo High Transition Frequency fT = 10 GHz Typ. @ VCE = 8 V, IC = 15 mAApplicationLNA and wide band amplifier up to GHz rangeSpecifications Symbol ...

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THN6301: Features: o Low Noise Figure NF = 1.1 dB Typ. @ f = 1 GHz, VCE = 8 V, IC = 5 mAo High Power Gain MAG =18 dB Typ. @ f = 1 GHz, VCE = 8 V, IC =15 mAo High Transition Frequency fT = 10 GHz Typ. @ VCE =...

THN6301 Data Sheet

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Part Number:
THN6301
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

o Low Noise Figure
   NF = 1.1 dB Typ. @ f = 1 GHz, VCE = 8 V, IC = 5 mA
o High Power Gain
   MAG =18 dB Typ. @ f = 1 GHz, VCE = 8 V, IC =15 mA
o High Transition Frequency
   fT = 10 GHz Typ. @ VCE = 8 V, IC = 15 mA


Application

LNA and wide band amplifier up to GHz range


Specifications

Symbol
 Parameter
Ratings
Unit
VCBO
 Collector to Base Breakdown Voltage
25
V
VCEO
 Collector to Emitter Breakdown Voltage
12
V
VEBO
 Emitter to Base Breakdown Voltage
2.5
V
IC
 Collector Current (DC)
65
mA
PT
 Total Power Dissipation
150
mW
Tstg
 Storage Temperature -65 ~ 150
Tj
 Operating Junction Temperature
150
Caution : ESD sensitive device


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