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THN6201Z

Features: · Low Noise FigureNF = 1.1 dB Typ. @ f = 1 GHz, VCE = 3 V, IC = 5 mANF = 1.5 dB Typ. @ f = 2 GHz, VCE = 3 V, IC = 5 mA· High Power GainMAG = 18.5 dB Typ. @ f = 1 GHz, VCE = 3 V, IC = 15 mA13 dB Typ. @ f = 2 GHz, VCE = 3 V, IC = 15 mA· High Transition FrequencyfT = 12 GHz Typ. @ VCE = 3 V...

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THN6201Z: Features: · Low Noise FigureNF = 1.1 dB Typ. @ f = 1 GHz, VCE = 3 V, IC = 5 mANF = 1.5 dB Typ. @ f = 2 GHz, VCE = 3 V, IC = 5 mA· High Power GainMAG = 18.5 dB Typ. @ f = 1 GHz, VCE = 3 V, IC = 15 mA...

THN6201Z Data Sheet

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Part Number:
THN6201Z
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Low Noise Figure
NF = 1.1 dB Typ. @ f = 1 GHz, VCE = 3 V, IC = 5 mA
NF = 1.5 dB Typ. @ f = 2 GHz, VCE = 3 V, IC = 5 mA
· High Power Gain
MAG = 18.5 dB Typ. @ f = 1 GHz, VCE = 3 V, IC = 15 mA
13 dB Typ. @ f = 2 GHz, VCE = 3 V, IC = 15 mA
· High Transition Frequency
fT = 12 GHz Typ. @ VCE = 3 V, IC = 15 mA




Application

LNA and wide band amplifier up to GHz range




Pinout






Specifications

VCBO Collector to Base Breakdown Voltage.........20V
VCEO Collector to Emitter Breakdown Voltage......12V
VEBO Emitter to Base Breakdown Voltage...........2.5V
IC Collector Current (DC)....................................35mA
PT Total Power Dissipation...............................150mW
TSTG Storage Temperature.......................-65 ~ 150
TJ Operating Junction Temperature....................150
Caution : ESD sensitive device




Description

THN6201Z Low noise and high gain small signal RF transistor
THN6201Z is used as low noise amplifier, gain amplifier, mixer and VCO for VHF and UHF band applications, such as FRS, cordless phone, TV tuner, RF modulator, wireless LAN and GPS.





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