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THN5601B

Features: ·4.8 Volt operation·P1dB 28 dBm @f=900MHz·Power gain 8.5 dB @f=900MHzApplication·Hand-held radio equipment in common emitter class-AB operation in 900 MHz communication band.PinoutSpecifications SYMBOL PARAMETER CONDITION VALUE Unit VCBO Collector-Base Voltage O...

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SeekIC No. : 004518760 Detail

THN5601B: Features: ·4.8 Volt operation·P1dB 28 dBm @f=900MHz·Power gain 8.5 dB @f=900MHzApplication·Hand-held radio equipment in common emitter class-AB operation in 900 MHz communication band.PinoutSpecific...

THN5601B Data Sheet

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Part Number:
THN5601B
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·4.8 Volt operation
·P1dB 28 dBm @f=900MHz
·Power gain 8.5 dB @f=900MHz




Application

·Hand-held radio equipment in common emitter class-AB operation in 900 MHz communication band.




Pinout






Specifications

SYMBOL
PARAMETER
CONDITION
VALUE
Unit
VCBO
 Collector-Base Voltage Open Emitter
20
V
VCEO
 Collector-Emitter Voltage Open Base
8
V
VEBO
 Emitter-Base Voltage Open Collector
3
V
Ic
 Collector Current (DC)
350
mA
PT
 Total Power Dissipation Ts = 60 ; note 1
1
W
TSTG
 Storage Temperature
-65 ~ 150
TJ
 Operating Junction Temperature
150





Description

The THN5601B is a low cost, NPN medium power SiGe HBT(Hetero-Junction Bipolar Transistor) encapsulated in a plastic SOT-223 SMD package.

The THN5601B can be used as a driver device or an output device, depending on the specific application.






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